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PRELIMINARY DATA SHEET
64M bits SDRAM WTR (Wide Temperature Range)
EDS6416AHTA-TT (4M words x 16 bits)
Description
The EDS6416AHTA is a 64M bits SDRAMs organized as 1,048,576 words x 16 bits x 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 54-pin plastic TSOP (II).
Pin Configurations
/xxx indicate active low signal.
54-pin Plastic TSOP (II) VDD DQ0
VDDQ
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Features
* * * * *
DQ1 DQ2
VSSQ
3.3V power supply Clock frequency: 133MHz (max.) Single pulsed /RAS x16 organization 4 banks can operate simultaneously and independently * Burst read/write operation and burst read/single write operation capability * Programmable burst length (BL): 1, 2, 4, 8, full page * 2 variations of burst sequence Sequential (BL = 1, 2, 4, 8, full page) Interleave (BL = 1, 2, 4, 8) * Programmable /CAS latency (CL): 2, 3 * Byte control by UDQM and LDQM * Refresh cycles: 4096 refresh cycles/64ms * 2 variations of refresh Auto refresh Self refresh * TSOP (II) package with lead free solder (Sn-Bi) * Wide temperature range Ambient temperature range: -20C to +85C
DQ3 DQ4
VDDQ
DQ5 DQ6
VSSQ
DQ7 VDD LDQM /WE /CAS /RAS /CS BA0 BA1 A10 A0 A1 A2 A3 VDD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
VSS DQ15
VSSQ
DQ14 DQ13
VDDQ
DQ12 DQ11
VSSQ
DQ10 DQ9
VDDQ
Document No. E0700E10 (Ver. 1.0) Date Published April 2005 (K) Japan Printed in Japan URL: http://www.elpida.com
L
DQ8 VSS NC UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS
Pr
This product became EOL in April, 2007.
(c)Elpida Memory, Inc. 2005
od
A0 to A11 BA0, BA1 DQ0 to DQ15 /CS /RAS /CAS /WE LDQM, UDQM CKE CLK VDD VSS VDDQ VSSQ NC
(Top view)
Address input Bank select address Data-input/output Chip select Row address strobe
Column address strobe
t uc
Write enable Input/output mask Clock enable Clock input
Power for internal circuit Ground for internal circuit
Power for DQ circuit Ground for DQ circuit No connection
EDS6416AHTA-TT
Ordering Information
Part number
1
Supply voltage
Organization (words x bits) Internal Banks 4M x 16 4
Clock frequency MHz (max.) 133
/CAS latency 3
Package 54-pin plastic TSOP (II)
EDS6416AHTA-75TT-E* 3.3V
Note:1. 100MHz operation at /CAS latency = 2.
Part Number
E D S 64 16 A H TA - 75 TT - E
Elpida Memory Type Environment Code E: Lead Free Spec Detail TT: WTR (-20C to +85C)
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D: Monolithic Device
Product Family S: SDRAM
Density / Bank 64: 64M/4-bank Organization 16: x16
Speed 75: 133MHz/CL3 100MHz/CL2
Power Supply, Interface A: 3.3V, LVTTL Die Rev.
Preliminary Data Sheet E0700E10 (Ver.1.0)
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2
Package TA: TSOP (II)
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EDS6416AHTA-TT
CONTENTS Description .................................................................................................................................................... 1 Features ........................................................................................................................................................ 1 Pin Configurations......................................................................................................................................... 1 Ordering Information ..................................................................................................................................... 2 Part Number.................................................................................................................................................. 2 Electrical Specifications ................................................................................................................................ 4 Block Diagram............................................................................................................................................. 10 Pin Function ................................................................................................................................................ 11 Command Operation................................................................................................................................... 12 Simplified State Diagram ............................................................................................................................ 20 Mode Register Configuration ...................................................................................................................... 21 Power-up sequence .................................................................................................................................... 23 Operation of the SDRAM ............................................................................................................................ 24 Timing Waveforms ...................................................................................................................................... 40 Package Drawing........................................................................................................................................ 46 Recommended Soldering Conditions ......................................................................................................... 47
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Preliminary Data Sheet E0700E10 (Ver.1.0)
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EDS6416AHTA-TT
Electrical Specifications
* All voltages are referenced to VSS (GND). * After power up, execute power up sequence and initialization sequence before proper device operation is achieved (refer to the Power up sequence). Absolute Maximum Ratings
Parameter Voltage on any pin relative to VSS Supply voltage relative to VSS Short circuit output current Power dissipation Operating ambient temperature Storage temperature Symbol VT VDD IOS PD TA Tstg Rating -0.5 to VDD + 0.5 ( 4.6 (max.)) -0.5 to +4.6 50 1.0 -20 to +85 -55 to +125 Unit V V mA W C C Note
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Parameter Supply voltage Input high voltage Input low voltage
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = -20C to +85C)
Symbol VDD, VDDQ VSS, VSSQ min. 3.0 0 2.0 -0.3 max. 3.6 0 VDD + 0.3 0.8 Unit V V V V Notes 1 2 3 4
L
VIH VIL
Notes: 1. 2. 3. 4.
The supply voltage with all VDD and VDDQ pins must be on the same level. The supply voltage with all VSS and VSSQ pins must be on the same level. VIH (max.) = VDD + 1.5V (pulse width 5ns). VIL (min.) = VSS - 1.5V (pulse width 5ns).
Preliminary Data Sheet E0700E10 (Ver.1.0)
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4
od t uc
EDS6416AHTA-TT
DC Characteristics 1 (TA = -20C to +85C, VDD, VDDQ = 3.3V 0.3V, VSS, VSSQ = 0V)
Parameter Operating current Standby current in power down Standby current in power down (input signal stable) Standby current in non power down Standby current in non power down (input signal stable) Active standby current in power down Active standby current in power down (input signal stable) Active standby current in non power down Active standby current in non power down (input signal stable) Burst operating current Refresh current Symbol IDD1 IDD2P IDD2PS IDD2N IDD2NS IDD3P IDD3PS IDD3N IDD3NS IDD4 IDD5 IDD6 Grade max. 100 3 2 20 9 4 3 35 20 120 220 1.5 Unit mA mA mA mA mA mA mA mA mA mA mA mA Test condition Burst length = 1 tRC = tRC (min.) CKE = VIL, tCK = tCK (min.) CKE = VIL, tCK = CKE, /CS = VIH, tCK = tCK (min.) CKE = VIH, tCK = , /CS = VIH CKE = VIL, tCK = tCK (min.) CKE = VIL, tCK = CKE, /CS = VIH, tCK = tCK (min.) CKE = VIH, tCK = , /CS = VIH tCK = tCK (min.), BL = 4 tRC = tRC (min.) VIH VDD - 0.2V VIL 0.2V Notes 1, 2, 3 6 7 4 8 1, 2, 6 2, 7 1, 2, 4 2, 8 1, 2, 5 3
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Self refresh current
Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CLK operating current. 7. After power down mode, no CLK operating current. 8. Input signals are VIH or VIL fixed.
Preliminary Data Sheet E0700E10 (Ver.1.0)
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Pr
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EDS6416AHTA-TT
DC Characteristics 2 (TA = -20C to +85C, VDD, VDDQ = 3.3V 0.3V, VSS, VSSQ = 0V)
Parameter Input leakage current Output leakage current Output high voltage Output low voltage Symbol ILI ILO VOH VOL min. -1 -1.5 2.4 -- max. 1 1.5 -- 0.4 Unit A A V V Test condition 0 VIN VDD 0 VOUT VDD, DQ = disable IOH = -2 mA IOL = 2 mA Notes
Pin Capacitance (TA = 25C, VDD, VDDQ = 3.3V 0.3V)
Parameter Input capacitance Symbol CI1 CI2 Pins CLK Address, CKE, /CS, /RAS, /CAS, /WE, DQM DQ min. 2.5 2.5 4 typ. -- -- -- max. 3.5 3.8 6.5 Unit pF pF pF Notes 1, 2, 4 1, 2, 4 1, 2, 3, 4
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Data input/output capacitance
CI/O
Notes: 1. 2. 3. 4.
Capacitance measured with Boonton Meter or effective capacitance measuring method. Measurement condition: f = 1MHz, 1.4V bias, 200mV swing. DQM = VIH to disable DOUT. This parameter is sampled and not 100% tested.
Preliminary Data Sheet E0700E10 (Ver.1.0)
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EDS6416AHTA-TT
AC Characteristics (TA = -20C to +85C, VDD, VDDQ = 3.3V 0.3V, VSS, VSSQ = 0V)
-75 Parameter System clock cycle time (CL = 2) (CL = 3) CLK high pulse width CLK low pulse width Access time from CLK Data-out hold time CLK to Data-out low impedance CLK to Data-out high impedance Symbol tCK tCK tCH tCL tAC tOH tLZ tHZ tSI tHI tRC tRAS tRCD tRP tDPL tDAL tRRD tT tREF min. 10 7.5 2.5 2.5 -- 2 0 -- 1.5 0.8 67.5 45 20 20 15 2CLK + 20ns 15 0.5 -- max. -- -- -- -- 5.4 -- -- 5.4 -- -- -- 120000 -- -- -- -- -- 5 64 ns ns ms 1 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes 1 1 1 1 1, 2 1, 2 1, 2, 3 1, 4 1 1 1 1 1 1 1
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Input setup time Input hold time Last data into active latency Transition time (rise and fall) Refresh period (4096 refresh cycles)
Ref/Active to Ref/Active command period Active to Precharge command period Active command to column command (same bank) Precharge to active command period Write recovery or data-in to precharge lead time
Active (a) to Active (b) command period
L
Notes: 1. 2. 3. 4.
AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 1.4V. Access time is measured at 1.4V. Load condition is CL = 30pF. tLZ (min.) defines the time at which the outputs achieves the low impedance state. tHZ (max.) defines the time at which the outputs achieves the high impedance state.
Preliminary Data Sheet E0700E10 (Ver.1.0)
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EDS6416AHTA-TT
Test Conditions * AC high level voltage/low level input voltage: 2.4V/0.4V * Input and output timing reference levels: 1.4V * Output timing measurement reference level: 1.4V * Input waveform and output load: See following figures
2.4 V
input
0.4 V
2.0 V 0.8 V
I/O CL tT
tT
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Preliminary Data Sheet E0700E10 (Ver.1.0)
Input waveform and Output load
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EDS6416AHTA-TT
Relationship Between Frequency and Minimum Latency
Parameter Frequency (MHz) tCK (ns) Active command to column command (same bank) Active command to active command (same bank) Active command to precharge command (same bank) Precharge command to active command (same bank) Write recovery or data-in to precharge command (same bank) Active command to active command (different bank) Self refresh exit time Last data in to active command (Auto precharge, same bank) Self refresh exit to command input Precharge command to high impedance (CL = 2) (CL = 3) Last data out to active command (Auto precharge, same bank) Last data out to precharge (early precharge) (CL = 2) (CL = 3) Column command to column command Write command to data in latency DQM to data in DQM to data out CKE to CLK disable Register set to active command /CS to command disable Power down exit to command input Symbol lRCD lRC lRAS lRP lDPL lRRD lSREX lDAL lSEC lHZP lHZP lAPR lEP lEP lCCD -75 133 7.5 3 9 6 3 2 2 1 5 9 3 1 -2 1 100 10 2 7 5 2 2 2 1 4 7 2 3 1 -1 -2 1 0 0 2 1 2 Unit tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK Notes 1 1 1 1 1 1 2 = [lDPL + lRP] = [lRC] 3
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Notes: 1. lRCD to lRRD are recommended value. 2. Be valid [DESL] or [NOP] at next command of self refresh exit. 3. Except [DESL] and [NOP]
Preliminary Data Sheet E0700E10 (Ver.1.0)
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Pr
lWCD lDID 0 0 lDOD lCLE 2 1 lMRD lCDD lPEC 2 0 1
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0 1
tCK
t uc
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EDS6416AHTA-TT
Block Diagram
CLK CKE
Clock Generator Bank 3 Bank 2 Bank 1 Row Address Buffer & Refresh Counter
Address
Mode Register
Row Decoder
Bank 0
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Command Decoder
Sense Amplifier
Control Logic
/CS
/RAS /CAS /WE
Data Control Circuit
Input & Output Buffer
Latch Circuit
Column Address Buffer & Burst Counter
Column Decoder & Latch Circuit
DQM
DQ
Preliminary Data Sheet E0700E10 (Ver.1.0)
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EDS6416AHTA-TT
Pin Function
CLK (input pin) CLK is the master clock input. Other inputs signals are referenced to the CLK rising edge. CKE (input pins) CKE determine validity of the next CLK (clock). If CKE is high, the next CLK rising edge is valid; otherwise it is invalid. If the CLK rising edge is invalid, the internal clock is not issued and the Synchronous DRAM suspends operation. When the Synchronous DRAM is not in burst mode and CKE is negated, the device enters power down mode. During power down mode, CKE must remain low. /CS (input pins) /CS low starts the command input cycle. When /CS is high, commands are ignored but operations continue. /RAS, /CAS, and /WE (input pins) /RAS, /CAS and /WE have the same symbols on conventional DRAM but different functions. For details, refer to the command table. A0 to A11 (input pins) Row Address is determined by A0 to A11 at the CLK (clock) rising edge in the active command cycle. Column Address is determined by A0 to A7 at the CLK rising edge in the read or write command cycle. A10 defines the precharge mode. When A10 is high in the precharge command cycle, all banks are precharged; when A10 is low, only the bank selected by BA0 and BA1 is precharged. When A10 is high in read or write command cycle, the precharge starts automatically after the burst access. BA0 and BA1 (input pin) BA0 and BA1 are bank select signal (BS). (See Bank Select Signal Table)
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Bank 0 Bank 1 Bank 2 Bank 3
[Bank Select Signal Table]
Remark: H: VIH. L: VIL.
UDQM and LDQM (input pins) UDQM and LDQM control input/output buffers. UDQM and LDQM control upper byte (DQ8 to DQ15) and lower byte (DQ0 to DQ7). DQ0 to DQ15 (input/output pins) DQ pins have the same function as I/O pins on a conventional DRAM.
VDD, VSS, VDDQ, VSSQ (Power supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output buffers.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
L H L H
Pr
BA0
BA1 L L H H
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11
t uc
EDS6416AHTA-TT
Command Operation
Command Truth Table The SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE Function Device deselect No operation Burst stop Read Read with auto precharge Write Symbol DESL NOP BST READ READA WRIT WRITA ACT PRE PALL MRS n-1 H H H H H H H H H H H n x x x x x x x x x x x /CS H L L L L L L L L L L /RAS x H H H H H H L L L L /CAS x H H L L L L H H H L /WE x H L H H L L H L L L BA1 x x x V V V V V V x L BA0 x x x V V V V V V x L A10 x x x L H L H V L H L
A0 to A11
x x x V V V V V x x V
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Write with auto precharge Bank activate Precharge select bank Precharge all banks Mode register set
Remark: H: VIH. L: VIL. x: VIH or VIL. V: Valid address input. Device deselect command [DESL] When this command is set (/CS is High), the SDRAM ignore command input at the clock. However, the internal status is held. No operation [NOP] This command is not an execution command. However, the internal operations continue. Burst stop command [BST] This command can stop the current burst operation.
Column address strobe and read command [READ] This command starts a read operation. In addition, the start address of burst read is determined by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). After the read operation, the output buffer becomes High-Z. Read with auto-precharge [READA] This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8. Column address strobe and write command [WRIT] This command starts a write operation. When the burst write mode is selected, the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1) become the burst write start address. When the single write mode is selected, data is only written to the location specified by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). Write with auto-precharge [WRITA] This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a single write operation.
Preliminary Data Sheet E0700E10 (Ver.1.0)
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Pr
12
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EDS6416AHTA-TT
Row address strobe and bank activate [ACT] This command activates the bank that is selected by BA0, BA1 and determines the row address (A0 to A11). (See Bank Select Signal Table) Precharge selected bank [PRE] This command starts precharge operation for the bank selected by BA0, BA1. (See Bank Select Signal Table) [Bank Select Signal Table]
BA0 Bank 0 Bank 1 Bank 2 Bank 3 L H L H BA1 L L H H
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Remark: H: VIH. L: VIL. Precharge all banks [PALL] This command starts a precharge operation for all banks. Refresh [REF/SELF] This command starts the refresh operation. There are two types of refresh operation, the one is auto-refresh, and the other is self-refresh. For details, refer to the CKE truth table section. Mode register set [MRS] The SDRAM has a mode register that defines how it operates. The mode register is specified by the address pins (A0 to BA0 and BA1) at the mode register set cycle. For details, refer to the Mode Register Configuration. After power on, the contents of the mode register are undefined, execute the mode register set command to set up the mode register.
Preliminary Data Sheet E0700E10 (Ver.1.0)
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Pr od t uc
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EDS6416AHTA-TT
DQM Truth Table
CKE Commands Upper byte write enable/output enable Lower byte write enable/output enable Upper byte write inhibit/output disable Lower byte write inhibit/output disable Symbol ENBU ENBL MASKU MASKL n-1 H H H H n x x x x UDQM L x H x LDQM x L x H
Remark: H: VIH. L: VIL. x: VIH or VIL Write: lDID is needed. Read: lDOD is needed. CKE Truth Table
CKE Symbol n-1 H L L REF SELF H H L L H H L L n L L H H L H H L L H H /CS x x x L L L H L H H L /RAS x x x L L H x H x x H /CAS x x x L L H x H x x H /WE x x x H H H x H x x H Address x x x x x x x x x x x
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Current state Activating Any Idle Function Clock suspend Idle Self refresh Idle Power down
Clock suspend mode entry Clock suspend mode Clock suspend mode exit CBR (auto) refresh command Self refresh entry
Self refresh exit Power down entry Power down exit
Remark: H: VIH. L: VIL. x: VIH or VIL
Preliminary Data Sheet E0700E10 (Ver.1.0)
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EDS6416AHTA-TT
Function Truth Table The following table shows the operations that are performed when each command is issued in each mode of the SDRAM. The following table assumes that CKE is high.
Current state Precharge /CS H L L L L L L /RAS x H H H H L L L L x H H H H L /CAS x H H L L H H L L x H H L L H /WE x H L H L H L H L x H L H L H L H L x H L Address x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE x x x Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT Operation Enter IDLE after tRP Enter IDLE after tRP ILLEGAL ILLEGAL*3 ILLEGAL*3 ILLEGAL*3 NOP*5 ILLEGAL ILLEGAL NOP NOP ILLEGAL ILLEGAL*4 ILLEGAL*4 Bank and row active NOP Refresh Mode register set*8 NOP NOP ILLEGAL Begin read*6 Begin write*6 Other bank active ILLEGAL on same bank*2 Precharge*7 ILLEGAL ILLEGAL
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L L Idle H L L L L L L L L Row active H L L L L L L L L Read H L L L L L L L L
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
L H L x H H H H L L L L x H H H H L L L L L x H L L H L L H H L L x H H L L H H L L
Pr
H L BA, CA, A10 BA, CA, A10 BA, RA H L BA, A10 H L x H L H L H L H L x x MODE x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE
PRE, PALL
od
REF, SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS
Continue burst to end Continue burst to end
Burst stop Continue burst read to /CAS latency and New read Term burst read/start write Other bank active ILLEGAL on same bank*2
t uc
Term burst read and Precharge ILLEGAL ILLEGAL
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EDS6416AHTA-TT
Current state Read with autoprecharge
/CS H L L L L L L L
/RAS x H H H H L L L L x H H H H L L
/CAS x H H L L H H L L x H H L L H H
/WE x H L H L H L H L x H L H L H L H L x H L
Address x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE x x x
Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS DESL NOP BST
Operation Continue burst to end and precharge Continue burst to end and precharge ILLEGAL ILLEGAL*3 ILLEGAL*3 Other bank active ILLEGAL on same bank*2 ILLEGAL*3 ILLEGAL ILLEGAL Continue burst to end Continue burst to end Burst stop Term burst and New read Term burst and New write Other bank active ILLEGAL on same bank*3 Term burst write and Precharge*1 ILLEGAL ILLEGAL Continue burst to end and precharge Continue burst to end and precharge ILLEGAL ILLEGAL*3 ILLEGAL*3 Other bank active ILLEGAL on same bank*3 ILLEGAL*3 ILLEGAL ILLEGAL
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L Write H L L L L L L L L Write with autoprecharge H L L L L L L L L Refresh (auto-refresh) H L L L L L L L L
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
L L L L x H H H H L L L L x H H H H L L L L x H H L L H H L L x H H L L H H L L
Pr
H L BA, CA, A10 BA, CA, A10 BA, RA H L H L x H L H L H L H L BA, A10 x x MODE x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE
READ/READA WRIT/WRITA ACT
od
PRE, PALL REF, SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS
Enter IDLE after tRC
Enter IDLE after tRC
ILLEGAL ILLEGAL*4 ILLEGAL*4 ILLEGAL*4 ILLEGAL*4
t uc
ILLEGAL ILLEGAL
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EDS6416AHTA-TT
Current state Mode register set
/CS H L L L L L L L L
/RAS x H H H H L L L L
/CAS x H H L L H H L L
/WE x H L H L H L H L
Address x x x BA, CA, A10 BA, CA, A10 BA, RA BA, A10 x MODE
Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE, PALL REF, SELF MRS
Operation NOP NOP ILLEGAL ILLEGAL*4 ILLEGAL*4 Bank and row active*9 NOP Refresh*9 Mode register set*8
Remark: H: VIH. L: VIL. x: VIH or VIL Notes: 1. An interval of tDPL is required between the final valid data input and the precharge command. 2. If tRRD is not satisfied, this operation is illegal. 3. Illegal for same bank, except for another bank. 4. Illegal for all banks. 5. NOP for same bank, except for another bank. 6. Illegal if tRCD is not satisfied. 7. Illegal if tRAS is not satisfied. 8. MRS command must be issued after DOUT finished, in case of DOUT remaining. 9. Illegal if lMRD is not satisfied.
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Preliminary Data Sheet E0700E10 (Ver.1.0)
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Pr od t uc
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EDS6416AHTA-TT
Command Truth Table for CKE
CKE Current State Self refresh n-1 n H L L L L L Self refresh recovery H H H x H H H H L H H H H L L L L x H H L /CS x H L L L x H L L L H L L L x H L x /RAS /CAS /WE Address x x H H L x x H H L x H H L x x H x x x x H L x x x H L x x H L x x x H x x x H L L x x x x x x x x x x x x x x x x x H x x x x H L x x x x x x x x x x x x x x x x x x Operation INVALID, CLK (n - 1) would exit self refresh Self refresh recovery Self refresh recovery ILLEGAL ILLEGAL Continue self refresh Idle after tRC Idle after tRC ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL INVALID, CLK (n - 1) would exit power down EXIT power down EXIT power down Continue power down mode Refer to operations in Function Truth Table Refer to operations in Function Truth Table Refer to operations in Function Truth Table CBR (auto) Refresh OPCODE Refer to operations in Function Truth Table Begin power down next cycle Refer to operations in Function Truth Table Refer to operations in Function Truth Table Self refresh 1 Notes
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H H H H H L L L Power down H All banks idle H H H H H H H H H H L L Row active Any state other than listed above H L H H L L
Remark: H: VIH. L: VIL. x: VIH or VIL Notes: 1. Self refresh can be entered only from the all banks idle state. Power down can be entered only from all banks idle. Clock suspend can be entered only from following states, row active, read, read with autoprecharge, write and write with auto precharge. 2. Must be legal command as defined in Function Truth Table.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
H H L L L L L H H L L L H H H L L L L L H L x x H L H L H L x H L L L x x x x x x x x L L x x x x x x x x
Pr
x x x x H L x x x x x x x x L H L x x x x x x x x x x x x x x x x
od
Exit power down next cycle Power down Clock suspend Maintain clock suspend
OPCODE Refer to operations in Function Truth Table 1 1 2
Refer to operations in Function Truth Table
Refer to operations in Function Truth Table Begin clock suspend next cycle Exit clock suspend next cycle
t uc
18
EDS6416AHTA-TT
Clock suspend mode entry The SDRAM enters clock suspend mode from active mode by setting CKE to Low. If command is input in the clock suspend mode entry cycle, the command is valid. The clock suspend mode changes depending on the current status (1 clock before) as shown below. ACTIVE clock suspend This suspend mode ignores inputs after the next clock by internally maintaining the bank active status. READ suspend and READ with Auto-precharge suspend The data being output is held (and continues to be output). WRITE suspend and WRIT with Auto-precharge suspend In this mode, external signals are not accepted. However, the internal state is held.
EO
Clock suspend During clock suspend mode, keep the CKE to Low. Clock suspend mode exit The SDRAM exits from clock suspend mode by setting CKE to High during the clock suspend state. IDLE In this state, all banks are not selected, and completed precharge operation. Auto-refresh command [REF] When this command is input from the IDLE state, the SDRAM starts auto-refresh operation. (The auto-refresh is the same as the CBR refresh of conventional DRAMs.) During the auto-refresh operation, refresh address and bank select address are generated inside the SDRAM. For every auto-refresh cycle, the internal address counter is updated. Accordingly, 4096 times are required to refresh the entire memory. Before executing the auto-refresh command, all the banks must be in the IDLE state. In addition, since the precharge for all banks is automatically performed after auto-refresh, no precharge command is required after auto-refresh. Self-refresh entry [SELF] When this command is input during the IDLE state, the SDRAM starts self-refresh operation. After the execution of this command, self-refresh continues while CKE is Low. Since self-refresh is performed internally and automatically, external refresh operations are unnecessary. Power down mode entry When this command is executed during the IDLE state, the SDRAM enters power down mode. In power down mode, power consumption is suppressed by cutting off the initial input circuit. Self-refresh exit When this command is executed during self-refresh mode, the SDRAM can exit from self-refresh mode. After exiting from self-refresh mode, the SDRAM enters the IDLE state.
Power down exit When this command is executed at the power down mode, the SDRAM can exit from power down mode. After exiting from power down mode, the SDRAM enters the IDLE state.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
Pr
19
od
t uc
EDS6416AHTA-TT
Simplified State Diagram
SELF REFRESH SR ENTRY SR EXIT
MODE REGISTER SET
MRS IDLE
REFRESH
*1 AUTO REFRESH
CKE CKE_
EO
WRITE SUSPEND WRITEA SUSPEND POWER APPLIED
ACTIVE CLOCK SUSPEND
ACTIVE
IDLE POWER DOWN
CKE_ CKE ROW ACTIVE
BST
BST
WRITE Write WRITE WITH AP READ READ WITH AP READ WITH AP WRITE
READ Read CKE_ READ CKE READ WITH AP CKE_ READA CKE READA SUSPEND READ SUSPEND
Note: 1. After the auto-refresh operation, precharge operation is performed automatically and enter the IDLE state.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
CKE_ CKE CKE_ CKE
WRITE
WRITE WITH AP
WRITE WITH AP
PRECHARGE
Automatic transition after completion of command. Transition resulting from command input.
Pr
WRITEA PRECHARGE PRECHARGE POWER ON PRECHARGE PRECHARGE
od
20
t uc
EDS6416AHTA-TT
Mode Register Configuration
Mode Register Set The mode register is set by the input to the address pins (A0 to A11, BA0 and BA1) during mode register set cycles. The mode register consists of five sections, each of which is assigned to address pins. BA1, BA0, A8, A9, A10, A11: (OPCODE): The SDRAM has two types of write modes. One is the burst write mode, and the other is the single write mode. These bits specify write mode. Burst read and burst write: Burst write is performed for the specified burst length starting from the column address specified in the write cycle. Burst read and single write: Data is only written to the column address specified during the write cycle, regardless of the burst length. A7: Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set. A6, A5, A4: (LMODE): These pins specify the /CAS latency. A3: (BT): A burst type is specified. A2, A1, A0: (BL): These pins specify the burst length.
BA1 BA0
EO
A11 BA1 BA0 A11 0 0 0 0 0 1 1 0 0 0 0 1 0 1 0 X X X X X X
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
A10 A9 OPCODE 0 0 0 0 1 0 0 1 1 X A10 0 X X X X X X A9 0 0 1 1 X X X A8 0 1 0 1 X X X
A8
A7 0
A6
A5 LMODE
A4
A3 BT
A2
A1 BL
A0
A6 A5 A4 0 1 0 1
CAS latency R R 2 3
A3 Burst type 0 1 Sequential Interleave A2 A1 A0 0 0 0 0 1 1 1 1 0 0 1 1 0 1 1 0 0 1 0 1 0 1 0 1
Pr
X R Write mode R R R R R Burst read and burst write Burst read and single write
Burst length BT=0 1 2 4 8 R R R F.P. BT=1 1 2 4 8 R R R R
Mode Register Set
od
21
F.P.: Full Page R is Reserved (inhibit) X: 0 or 1
t uc
EDS6416AHTA-TT
Burst length = 2 Starting Ad. Addressing(decimal) A0 0 1 Sequential Interleave 0, 1, 1, 0, 0, 1, 1, 0,
Burst length = 4 Starting Ad. Addressing(decimal) A1 0 0 1 1 A0 0 1 0 1 Sequential 0, 1, 2, 3, 1, 2, 3, 0, 2, 3, 0, 1, 3, 0, 1, 2, Interleave 0, 1, 2, 3, 1, 0, 3, 2, 2, 3, 0, 1, 3, 2, 1, 0,
Burst length = 8 Starting Ad. A2 0 0 0 0 A1 0 0 1 1 0 1 0 1 0 1 0 1 Addressing(decimal) Interleave 0, 1, 2, 3, 4, 5, 6, 7, 1, 0, 3, 2, 5, 4, 7, 6, 2, 3, 0, 1, 6, 7, 4, 5, 3, 2, 1, 0, 7, 6, 5, 4, 4, 5, 6, 7, 0, 1, 2, 3, 5, 4, 7, 6, 1, 0, 3, 2, 6, 7, 4, 5, 2, 3, 0, 1, 7, 6, 5, 4, 3, 2, 1, 0, 0, 1, 2, 3, 4, 5, 6, 7, 1, 2, 3, 4, 5, 6, 7, 0, 2, 3, 4, 5, 6, 7, 0, 1, 3, 4, 5, 6, 7, 0, 1, 2, 4, 5, 6, 7, 0, 1, 2, 3, 5, 6, 7, 0, 1, 2, 3, 4, 6, 7, 0, 1, 2, 3, 4, 5, 7, 0, 1, 2, 3, 4, 5, 6, A0 Sequential
EO
1 1 0 1 1 0 1 1
Burst Sequence
Full page burst is available only for sequential addressing. The addressing sequence is started from the column address that is asserted by read/write command. And the address is increased one by one. It is back to the address 0 when the address reaches at the end of address 255. "Full page burst" stops the burst read/write with burst stop command.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
Pr od t uc
22
EDS6416AHTA-TT
Power-up sequence
Power-up sequence The SDRAM should be goes on the following sequence with power up. The CLK, CKE, /CS, DQM and DQ pins keep low till power stabilizes. The CLK pin is stabilized within 100 s after power stabilizes before the following initialization sequence. The CKE and DQM is driven to high between power stabilizes and the initialization sequence. This SDRAM has VDD clamp diodes for CLK, CKE, address, /RAS, /CAS, /WE, /CS, DQM and DQ pins. If these pins go high before power up, the large current flows from these pins to VDD through the diodes. Initialization sequence When 200 s or more has past after the above power-up sequence, all banks must be precharged using the precharge command (PALL). After tRP delay, set 8 or more auto refresh commands (REF). Set the mode register set command (MRS) to initialize the mode register. We recommend that by keeping DQM and CKE to High, the output buffer becomes High-Z during Initialization sequence, to avoid DQ bus contention on memory system formed with a number of device.
Power up sequence 100 s 0V Low Low Low Initialization sequence 200 s
EO
VDD, VDDQ CKE, DQM CLK /CS, DQ
Preliminary Data Sheet E0700E10 (Ver.1.0)
L Pr
Power stabilize
Power-up sequence and Initialization sequence
od t uc
23
EDS6416AHTA-TT
Operation of the SDRAM
Read/Write Operations Bank active Before executing a read or write operation, the corresponding bank and the row address must be activated by the bank active (ACT) command. An interval of tRCD is required between the bank active command input and the following read/write command input. Read operation A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1) cycle after read command set. The SDRAM can perform a burst read operation. The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address and the bank select address at the read command set cycle. In a read operation, data output starts after the number of clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3. When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the successive burst-length data has been output. The /CAS latency and burst length must be specified at the mode register.
CLK
EO
Command Address DQ CL = 2 CL = 3
CLK Command Address
ACT Row
tRCD
READ
ACT
Row
Column
BL = 1
DQ
BL = 2 BL = 4
out 0 out 1 out 2
BL = 8
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
tRCD
READ
Column
out 0
out 1 out 0
out 2 out 1
out 3 out 2 out 3 CL = /CAS latency Burst Length = 4
Pr
/CAS Latency
od
24
out 0 out 0 out 1
out 0 out 1 out 2 out 3
out 3 out 4 out 5 out 6 out 7
BL : Burst Length /CAS Latency = 2
t uc
Burst Length
EDS6416AHTA-TT
Write operation Burst write or single write mode is selected by the OPCODE of the mode register. 1. Burst write: A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts in the same clock as a write command set. (The latency of data input is 0 clock.) The burst length can be set to 1, 2, 4 and 8, like burst read operations. The write start address is specified by the column address and the bank select address at the write command set cycle.
CLK
tRCD
Command Address
ACT
WRIT
Row
Column
BL = 1 BL = 2 BL = 4 BL = 8
in 0 in 0 in 0 in 0 in 1 in 1 in 1
in 2 in 2
EO
DQ
in 3 in 3 in 4 in 5 in 6 in 7
CL = 2, 3
Burst write
2. Single write: A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write operation, data is only written to the column address and the bank select address specified by the write command set cycle without regard to the burst length setting. (The latency of data input is 0 clock).
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
CLK Command Address DQ
tRCD WRIT
ACT
Pr
Row Column
in 0
Single write
od t uc
25
EDS6416AHTA-TT
Auto Precharge Read with auto-precharge In this operation, since precharge is automatically performed after completing a read operation, a precharge command need not be executed after each read operation. The command executed for the same bank after the execution of this command must be the bank active (ACT) command. In addition, an interval defined by lAPR is required before execution of the next command. [Clock cycle time]
/CAS latency 3 2
CLK
Precharge start cycle 2 cycle before the final data is output 1 cycle before the final data is output
EO
CL=2 Command ACT DQ CL=3 Command ACT DQ
READA lRAS out0 out1 out2 out3
ACT
lAPR READA lRAS out0 out1 out2 out3 ACT
Note: Internal auto-precharge starts at the timing indicated by " ". And an interval of tRAS (lRAS) is required between previous active (ACT) command and internal precharge "
lAPR
".
Write with auto-precharge In this operation, since precharge is automatically performed after completing a burst write or single write operation, a precharge command need not be executed after each write operation. The command executed for the same bank after the execution of this command must be the bank active (ACT) command. In addition, an interval of lDAL is required between the final valid data input and input of next command.
Command
Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACT) command and internal precharge " ".
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
CLK
ACT
Burst Read (BL = 4)
Pr
WRITA
ACT
lRAS
od
in0 in1 in2 in3 lDAL
DQ
t uc
Burst Write (BL = 4)
26
EDS6416AHTA-TT
CLK Command
ACT ACT
WRITA
lRAS DQ in lDAL Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACT) command and internal precharge " ".
EO
Single Write
Preliminary Data Sheet E0700E10 (Ver.1.0)
L Pr od t uc
27
EDS6416AHTA-TT
Burst Stop Command During a read cycle, when the burst stop command is issued, the burst read data are terminated and the data bus goes to High-Z after the /CAS latency from the burst stop command.
CLK Command DQ (CL = 2) DQ (CL = 3)
READ BST High-Z
out
out
out
out
out
out
High-Z
EO
CLK Command DQ
Burst Stop at Read
During a write cycle, when the burst stop command is issued, the burst write data are terminated and data bus goes to High-Z at the same clock with the burst stop command.
WRITE in in in in
BST
High-Z
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
Burst Stop at Write
Pr od t uc
28
EDS6416AHTA-TT
Command Intervals Read command to Read command interval 1. Same bank, same ROW address: When another read command is executed at the same ROW address of the same bank as the preceding read command execution, the second read can be performed after an interval of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid.
CLK Command
Address
BS
ACT READ READ
Row
Column A Column B
DQ
out A0 out B0 out B1 out B2 out B3 Bank0 Active Column =A Column =B Column =A Column =B Dout Read Read Dout
EO
CLK Command
Address
CL = 3 BL = 4 Bank 0
READ to READ Command Interval (same ROW address in same bank)
2. Same bank, different ROW address: When the ROW address changes on same bank, consecutive read commands cannot be executed; it is necessary to separate the two read commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second read can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid.
BS
DQ
Bank0 Active
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
ACT ACT
Row 0
Row 1
READ READ
Column A Column B
READ to READ Command Interval (different bank)
Pr
Bank3 Bank0 Bank3 Active Read Read Bank0 Bank3 Dout Dout
out A0 out B0 out B1 out B2 out B3
CL = 3 BL = 4
od t uc
29
EDS6416AHTA-TT
Write command to Write command interval 1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes, the second write command has priority.
CLK Command
Address
ACT WRIT WRIT
Row
Column A Column B
BS
DQ
in A0 Bank0 Active in B0 in B1 in B2 in B3
EO
CLK Command
ACT
Column =A Column =B Write Write
Burst Write Mode BL = 4 Bank 0
WRITE to WRITE Command Interval (same ROW address in same bank)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two write commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. In the case of burst write, the second write command has priority.
Address
BS
DQ
Bank0 Active
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
ACT
Row 0
Row 1
WRIT
WRIT
Column A Column B
WRITE to WRITE Command Interval (different bank)
Pr
in A0 in B0 in B1 in B2 in B3 Bank3 Bank0 Bank3 Active Write Write
Burst Write Mode BL = 4
od t uc
30
EDS6416AHTA-TT
Read command to Write command interval 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preceding read command, the write command can be performed after an interval of no less than 1 clock. However, UDQM and LDQM must be set High so that the output buffer becomes High-Z before data input.
CLK Command
READ WRIT
UDQM CL=2 LDQM CL=3
DQ (input)
in B0 High-Z in B1 in B2 in B3
DQ (output)
BL = 4 Burst write
EO
DQ
READ to WRITE Command Interval (1)
CLK
READ WRIT
Command
UDQM LDQM
CL=2 CL=3
2 clock
out out out out out in in in in in in in in
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank active state. However, UDQM and LDQM must be set High so that the output buffer becomes High-Z before data input.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
Pr
31
READ to WRITE Command Interval (2)
od
t uc
EDS6416AHTA-TT
Write command to Read command interval: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preceding write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed.
CLK Command UDQM LDQM
DQ (input)
WRIT
READ
in A0 out B0 Column = A Write Column = B Read out B1 out B2 out B3
Burst Write Mode CL = 2 BL = 4 Bank 0
EO
DQ (output)
CLK Command UDQM LDQM DQ (input) DQ (output)
/CAS Latency Column = B Dout
WRITE to READ Command Interval (1)
WRIT
READ
2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address).
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
in A0 Column = A Write
in A1 out B0 out B1 out B2 out B3 Burst Write Mode CL = 2 BL = 4 Bank 0
Pr
Column = B Read
/CAS Latency
Column = B Dout
WRITE to READ Command Interval (2)
od
32
t uc
EDS6416AHTA-TT
Read with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. Even when the first read with auto-precharge is a burst read that is not yet finished, the data read by the second command is valid. The internal auto-precharge of one bank starts at the next clock of the second command.
CLK Command BS DQ bank0 Read A bank3 Read ". out A0 out A1 out B0 out B1 CL= 3 BL = 4 READA READ
Note: Internal auto-precharge starts at the timing indicated by "
EO
CLK Command BS DQ
Read with Auto Precharge to Read Command Interval (Different bank)
2. Same bank: The consecutive read command (the same bank) is illegal. Write with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. In the case of burst writes, the second write command has priority. The internal auto-precharge of one bank starts 2 clocks later from the second command.
Note: Internal auto-precharge starts at the timing indicated by "
2. Same bank: The consecutive write command (the same bank) is illegal.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
WRITA in A0 bank0 Write A in A1
WRIT
in B0 bank3 Write
in B1
in B2
in B3 BL= 4
Write with Auto Precharge to Write Command Interval (Different bank)
Pr
33
".
od t uc
EDS6416AHTA-TT
Read with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. However, UDQM and LDQM must be set High so that the output buffer becomes High-Z before data input. The internal auto-precharge of one bank starts at the next clock of the second command.
CLK Command BS UDQM LDQM CL = 2 CL = 3 in B0 in B1 in B2 in B3 READA WRIT
DQ (input)
EO
CLK Command BS UDQM LDQM DQ (input) DQ (output)
DQ (output) bank0 ReadA bank3 Write
High-Z BL = 4 ".
Note: Internal auto-precharge starts at the timing indicated by "
Read with Auto Precharge to Write Command Interval (Different bank)
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command. Write with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. However, in case of a burst write, data will continue to be written until one clock before the read command is executed. The internal auto-precharge of one bank starts at 2 clocks later from the second command.
2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
WRITA in A0 bank0 WriteA
Note: Internal auto-precharge starts at the timing indicated by "
Write with Auto Precharge to Read Command Interval (Different bank)
Pr
READ
od
out B0 out B1
out B2
out B3 CL = 3 BL = 4 ".
bank3 Read
t uc
34
EDS6416AHTA-TT
Read command to Precharge command interval (same bank) When the precharge command is executed for the same bank as the read command that preceded it, the minimum interval between the two commands is one clock. However, since the output buffer then becomes High-Z after the clocks defined by lHZP, there is a case of interruption to burst read data output will be interrupted, if the precharge command is input during burst read. To read all data by burst read, the clocks defined by lEP must be assured as an interval from the final data output to precharge command execution.
CLK
Command
READ
PRE/PALL
DQ
out A0
out A1
out A2
out A3
CL=2
lEP = -1 cycle
EO
CLK Command DQ
CLK Command DQ CLK Command DQ
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2, BL = 4)
READ
PRE/PALL
out A0
out A1
out A2
out A3
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 1, 2, 4, 8)
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 1, 2, 4, 8)
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
READ READ
CL=3
lEP = -2 cycle
Pr
PRE/PALL High-Z out A0 lHZP = 2 PRE/PALL out A0 lHZP =3
od
High-Z
t uc
35
EDS6416AHTA-TT
Write command to Precharge command interval (same bank) When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of UDQM and LDQM for assurance of the clock defined by tDPL.
CLK Command UDQM LDQM DQ in A0 in A1 in A2 WRIT
PRE/PALL
EO
CLK Command UDQM LDQM DQ
tDPL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To stop write operation))
WRIT
PRE/PALL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To write all data))
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
in A0
in A1
in A2
in A3
tDPL
Pr od t uc
36
EDS6416AHTA-TT
Bank active command interval 1. Same bank: The interval between the two bank active commands must be no less than tRC. 2. In the case of different bank active commands: The interval between the two bank active commands must be no less than tRRD.
CLK Command ACT ACT
Address
ROW
ROW
BS
tRC
Bank 0 Active
EO
Bank 0 Active
Bank Active to Bank Active for Same Bank
CLK ACT ROW:0 ACT ROW:1
Command Address
Mode register set to Bank active command interval The interval between setting the mode register and executing a bank active command must be no less than lMRD.
CLK
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
BS
Command Address
tRRD Bank 0 Active Bank 3 Active
Mode register set to Bank active command interval
Pr
MRS OPCODE lMRD Mode Register Set
Bank Active to Bank Active for Different Bank
od
ACT
BS & ROW
Bank Active
t uc
37
EDS6416AHTA-TT
DQM Control The UDQM and LDQM mask the upper and lower bytes of the DQ data, respectively. The timing of UDQM and LDQM is different during reading and writing. Reading When data is read, the output buffer can be controlled by UDQM and LDQM. By setting UDQM and LDQM to Low, the output buffer becomes Low-Z, enabling data output. By setting UDQM and LDQM to High, the output buffer becomes High-Z, and the corresponding data is not output. However, internal reading operations continue. The latency of UDQM and LDQM during reading is 2 clocks. Writing Input data can be masked by UDQM and LDQM. By setting DQM to Low, data can be written. In addition, when UDQM and LDQM are set to High, the corresponding data is not written, and the previous data is held. The latency of UDQM and LDQM during writing is 0 clock.
EO
CLK UDQM LDQM DQ
CLK UDQM LDQM DQ
Preliminary Data Sheet E0700E10 (Ver.1.0)
High-Z out 0 out 1 out 3
lDOD = 2 Latency
Reading
L
in 0
Pr
in 1
in 3
lDID = 0 Latency
od
Writing
t uc
38
EDS6416AHTA-TT
Refresh Auto-refresh All the banks must be precharged before executing an auto-refresh command. Since the auto-refresh command updates the internal counter every time it is executed and determines the banks and the ROW addresses to be refreshed, external address specification is not required. The refresh cycles are required to refresh all the ROW addresses within tREF (max.). The output buffer becomes High-Z after auto-refresh start. In addition, since a precharge has been completed by an internal operation after the auto-refresh, an additional precharge operation by the precharge command is not required. Self-refresh After executing a self-refresh command, the self-refresh operation continues while CKE is held Low. During selfrefresh operation, all ROW addresses are refreshed by the internal refresh timer. A self-refresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within tREF (max.) period on the condition 1 and 2 below. 1. Enter self-refresh mode within time as below* after either burst refresh or distributed refresh at equal interval to all refresh addresses are completed. 2. Start burst refresh or distributed refresh at equal interval to all refresh addresses within time as below*after exiting from self-refresh mode.
EO
Note: tREF (max.) / refresh cycles. Others Power-down mode The SDRAM enters power-down mode when CKE goes Low in the IDLE state. In power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode continues while CKE is held Low. In addition, by setting CKE to High, the SDRAM exits from the power down mode, and command input is enabled from the next clock. In this mode, internal refresh is not performed.
Clock suspend mode By driving CKE to Low during a bank active or read/write operation, the SDRAM enters clock suspend mode. During clock suspend mode, external input signals are ignored and the internal state is maintained. When CKE is driven High, the SDRAM terminates clock suspend mode, and command input is enabled from the next clock. For details, refer to the "CKE Truth Table".
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
Pr
39
od t uc
EDS6416AHTA-TT
Timing Waveforms
Read Cycle
tCK tCH t CL
CLK
t RC VIH
CKE
tRCD tSI tHI tSI tHI
tRAS tSI tHI
t RP tSI tHI
/CS
tSI tHI tSI tHI tSI tHI tSI tHI
/RAS
tSI tHI tSI tHI tSI tHI tSI tHI
EO
/CAS /WE BS A10 Address UDQM LDQM DQ (input) DQ (output)
tSI tHI
tSI tHI
tSI tHI tSI tHI
tSI tHI tSI tHI
tSI tHI
tSI tHI
tSI tHI
tSI tHI tSI tHI
tSI tHI
tSI tHI
tSI tHI
tSI tHI
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
tSI
tAC t AC tOH
Bank 0 Active Bank 0 Read
tHI
tAC
tAC
tHZ
Pr
tOH tOH tLZ
Bank 0 Precharge
tOH
/CAS latency = 2 Burst length = 4 Bank 0 access = VIH or VIL = VOH or VOL
od t uc
40
EDS6416AHTA-TT
Write Cycle
tCK tCH tCL
CLK
tRC
VIH
CKE
tRCD tSI tHI tSI tHI tSI tHI tSI tHI tRAS tRP
/CS
tSI tHI tSI tHI tSI tHI tSI tHI
/RAS
tSI tHI tSI tHI tSI tHI tSI tHI
/CAS
tSI tHI tSI tHI tSI tHI tSI tHI
EO
/WE BS A10 Address UDQM LDQM DQ (input) DQ (output)
0
tSI tHI tSI tHI
tSI tHI
tSI tHI
tSI tHI tSI tHI
tSI tHI tSI tHI
tSI tHI
tSI tHI
tSI tHI
tSI
tHI
Mode Register Set Cycle
1 2
L
tSI Bank 0 Active
t HI
tSI
tHI tSI
tHI
tSI
tHI
tDPL
Pr
Bank 0 Write
Bank 0 Precharge
CL = 2 BL = 4 Bank 0 access = VIH or VIL
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLK CKE /CS /RAS /CAS /WE BS Address UDQM LDQM DQ (output) DQ (input)
lRP
Precharge If needed
VIH
od
R: b C: b C: b'
valid
code
t uc
b+3 b' b'+1 b'+2 b'+3 lRCD = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
b High-Z lMRD
Mode register Set Bank 3 Active
lRCD
Bank 3 Read
Output mask
Preliminary Data Sheet E0700E10 (Ver.1.0)
41
EDS6416AHTA-TT
Read Cycle/Write Cycle
0 CLK CKE /CS /RAS /CAS /WE BS Address
UDQM, LDQM
VIH
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Read cycle /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
R:a
C:a
R:b a
C:b a+1 a+2 a+3
Bank 3 Bank 0 Read Precharge
C:b' b
High-Z
C:b" b'+1 b" b"+1 b"+2 b"+3
Bank 3 Precharge
DQ (output) DQ (input)
Bank 0 Active Bank 0 Read Bank 3 Active
b+1 b+2 b+3 b'
Bank 3 Read Bank 3 Read
CKE /CS
VIH
/RAS /CAS /WE BS
Write cycle /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
EO
Address R:a
UDQM, LDQM
C:a
R:b
C:b
High-Z
C:b'
C:b"
DQ (output) DQ (input)
a
Bank 0 Write
a+1 a+2 a+3
Bank 3 Active
b
Bank 3 Write
b+1 b+2 b+3 b'
Bank 0 Precharge Bank 3 Write
b'+1 b"
Bank 3 Write
b"+1 b"+2 b"+3
Bank 3 Precharge
Bank 0 Active
Read/Single Write Cycle
CLK CKE /RAS /CAS /WE BS Address /CS
UDQM, LDQM
DQ (input) DQ (output)
Bank 0 Active
CKE /CS /RAS /CAS /WE BS Address
UDQM, LDQM
DQ (input) DQ (output)
Bank 0 Active Bank 0 Read Bank 3 Active
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
0 1 2 3
VIH
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Pr
C:a R:b a
Bank 0 Read Bank 3 Active
R:a
C:a' C:a a a a+1 a+2 a+3
Bank 0 Precharge Bank 3 Precharge
a+1 a+2 a+3
od
Bank 0 Bank 0 Write Read
VIH
t uc
C:b C:c b c
Bank 0 Bank 0 Write Write Bank 0 Precharge
R:a
C:a
R:b
C:a a a a+1 a+3
Bank 0 Write
Read/Single write /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
42
EDS6416AHTA-TT
Read/Burst Write Cycle
0 CLK CKE /CS /RAS /CAS /WE BS Address UDQM, LDQM DQ (input) DQ (output) a
Bank 0 Read Bank 3 Active
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
R:a
C:a
R:b
C:a' a a+1 a+2 a+3
Clock suspend
a+1 a+2 a+3
Bank 0 Precharge Bank 3 Precharge
EO
Bank 0 Active
Bank 0 Write
CKE /CS
VIH
/RAS /CAS BS
/WE
Address
R:a
C:a
R:b
C:a a a a+1 a+3
Bank 0 Write Bank 0 Precharge
L
Bank 0 Active Bank 0 Read
UDQM, LDQM DQ (input) DQ (output)
a+1 a+2 a+3
Bank 3 Active
Read/Burst write /RAS-/CAS delay = 3 /CAS latency = 3 Burst length = 4 = VIH or VIL
Pr
3 4 5 6 7 8 9 10 11 High-Z
Auto Refresh Cycle
0 1 2
12
13
14
15
16
17
18
19
20
CLK CKE /CS /RAS /CAS /WE BS Address
UDQM LDQM
A10=1
VIH
od
R:a
C:a
t uc
a a+1
Active Bank 0 Read Bank 0
DQ (input) DQ (output)
t RP
Precharge If needed Auto Refresh
t RC
Auto Refresh
t RC
Refresh cycle and Read cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL
Preliminary Data Sheet E0700E10 (Ver.1.0)
43
EDS6416AHTA-TT
Self Refresh Cycle
CLK CKE /CS /RAS /CAS /WE BS Address
A10=1
lSREX
CKE Low
UDQM LDQM
EO
DQ (input) DQ (output)
High-Z
t RP
Self refresh entry command Self refresh exit ignore command or No operation
t RC
Next clock enable Self refresh entry command
t RC
Auto Next clock refresh enable
Precharge command If needed
Self refresh cycle /RAS-/CAS delay = 3 CL = 3 BL = 4 = VIH or VIL
Clock Suspend Mode
0
tSI
tHI
tSI
L
1 2 3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
CLK CKE /CS /RAS /CAS /WE BS Address UDQM, LDQM DQ (output) DQ (input)
Read cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL
Pr
C:a R:b a a+1 a+2
High-Z
Active clock Bank0 suspend end Read Bank3 Active
Read suspend start
Read suspend end
R:a
C:b b b+1 b+2 b+3
a+3
Bank0 Active clock Active suspend start
Bank3 Read
Bank0 Precharge
Earliest Bank3 Precharge
CKE /CS /RAS /CAS /WE BS Address UDQM, LDQM DQ (output) DQ (input)
Bank0 Active
Active clock suspend start
Write cycle /RAS-/CAS delay = 2 /CAS latency = 2 Burst length = 4 = VIH or VIL
od
C:b
High-Z
R:a
C:a R:b
a
a+1 a+2
a+3 b
b+1 b+2 b+3
t uc
Earliest Bank3 Precharge
Active clock Bank0 Bank3 supend end Write Active
Write suspend start
Write suspend end
Bank3 Bank0 Write Precharge
Preliminary Data Sheet E0700E10 (Ver.1.0)
44
EDS6416AHTA-TT
Power Down Mode
CLK CKE /CS /RAS /CAS /WE BS Address UDQM LDQM
High-Z
A10=1
CKE Low
R: a
EO
Initialization Sequence
0 1
DQ (input)
DQ (output) tRP
Precharge command If needed Power down entry
Power down /RAS-/CAS delay = 3 mode exit Active Bank 0 /CAS latency = 3
Power down cycle Burst length = 4 = VIH or VIL
2
3
4
5
6
7
8
9
10
48
49
50
51
52
53
54
55
CLK
L
VIH
CKE /CS /RAS /CAS
Pr
t RC Auto Refresh Auto Refresh
/WE Address
valid VIH
code
Valid
UDQM LDQM
DQ
High-Z tRC lMRD Mode register Set Bank active If needed
tRP All banks Precharge
od
45
t uc
Preliminary Data Sheet E0700E10 (Ver.1.0)
EDS6416AHTA-TT
Package Drawing
54-pin Plastic TSOP(ll) Solder plating: Lead free (Sn-Bi)
Unit: mm
22.22 0.10*1
A
54
28
PIN#1 ID
1
27
B
0.80 0.16 M S A B
0.30 to 0.45
11.76 0.20
10.16
0.12 to 0.21
1.0 0.05
1.2 max.
S
0.10 S
0.10 0.05
EO
0.71
0.80 Nom 0 to 8
0.25
Note: 1. This dimension does not include mold protrusions or gate burrs. Mold protrusions and gate burrs shall not exceed 0.15mm per side.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
0.50 0.10
Pr
46
od
ECA-TS2-0102-01
t uc
EDS6416AHTA-TT
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDS6416AHTA. Type of Surface Mount Device EDS6416AHTA : 54-pin Plastic TSOP(ll) < Lead free (Sn-Bi) >
EO
Preliminary Data Sheet E0700E10 (Ver.1.0)
L Pr od t uc
47
EDS6416AHTA-TT
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it.
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
EO
2 3
No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications.
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function.
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
Pr
48
CME0107
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EDS6416AHTA-TT
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations.
EO
Preliminary Data Sheet E0700E10 (Ver.1.0)
L
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M01E0107
od t uc

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